[13p-A202-1~17] 13.9 化合物太陽電池

▲ [13p-A202-7] Solid Epitaxial Lift-off (ELO) of GaAs Solar Cell on Silicon Substrate

〇(M2)Ziqi Zhang¹、Kentaroh Watanabe¹、Hassanet Sodabanlu¹、Yoshiaki Nakano¹、Masakazu Sugiyama¹ (1.Univ. of Tokyo)

キーワード：III-V solar cell, Epitaxial Lift-off

Epitaxial lift-off (ELO) is method to recycle and reuse the III-V substrate in order to reduce overall cost of expensive III-V solar cell devices. Most of the previous research focused on ELO process of single junction GaAs solar cell on an external flexible polymer substrate to induce bending on the device to accelerate the etch process. A new approach, we call it Solid ELO, that uses thin silicon wafer to bend the sample, is under investigation, which can possibly serve as a method of ELO process for III-V//Si multijunction solar cell. In this study, we fabricated small sized samples of GaAs solar cell//silicon substrate by Surface Activated Bonding (SAB), used Solid ELO method to separate GaAs solar cell//Si substrate from GaAs substrate, and measured PV characteristic of separated solar cell devices.