2:00 PM - 2:30 PM
[13p-A301-2] Device technology of ReRAM and its expansion to next-generation applications
Keywords:ReRAM, Neuromorphic device, hydrogen sensor
Panasonic’s ReRAM (Resistive Random Access Memory) is a nonvolatile memory characterized with a 2-layers TaO structure and its conductive filament formed inside. The resistance of each memory cell is determined by the oxygen vacancy density inside the filament and it can be controlled by changing the operating voltage or current through the filament.
ReRAM device thus has features of ‘Low power consumption’ and ‘Analog characteristics due to oxygen vacancy density’. Utilizing this resistive switching mechanism in our ReRAM, we have developed next-generation applications such as edge-AI applications (Resistive Analog Neuro Device -RAND) and hydrogen sensing solutions (ReH sensor).
This presentation introduces our ReRAM device technology and features of devices for next-generation applications.
ReRAM device thus has features of ‘Low power consumption’ and ‘Analog characteristics due to oxygen vacancy density’. Utilizing this resistive switching mechanism in our ReRAM, we have developed next-generation applications such as edge-AI applications (Resistive Analog Neuro Device -RAND) and hydrogen sensing solutions (ReH sensor).
This presentation introduces our ReRAM device technology and features of devices for next-generation applications.