[13p-B401-1~9] 3.11 Photonic structures and phenomena

[13p-B401-3] Influence of electrostatic irradiationon Raman silicon nanocavity laser

〇Satoshi Yasuda¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Raman silicon Laser, photonic crystal, static electricity

Photonic crystal nanocavities are expected to develop high-sensitivity sensors because of their advantages such as high Q value, small size, and wavelength selectivity. In particular, sensors that detect targets by shifting the resonance peak wavelength have been actively studied in the biotechnology field . We have been developing Raman silicon laser using a high Q-factor photonic crystal nanocavity . In this device, laser oscillation occurs as a result of dramatically increasing the stimulated Raman scattering efficiency, which is the third-order nonlinear effect, by a resonance mode having a Q factor of 1,000,000 or more. Therefore, oscillation stops due to a little environmental change near the nanocavity. Since Raman scattering involves wavelength conversion of 100 nm or more, it is easy to detect the stop of oscillation. We believe that if these features are used, sensing with noise immunity and reproducibility will be possible for targets that have never existed before. This time, we report the influence of elelctrostatic irradiation on Raman laser, which is one of the causes of serious accidents at manufacturing sites.