14:00 〜 14:15
▼ [13p-D221-2] Light-Driven Applications of Vertically Aligned Few-Layer MoS2
キーワード：Vertically grown few-layer MoS2, Photo diode, SERS
Two-dimensional (2D) transition metal dichalcogenides (TMDs) materials have tremendous potential due to their attractive properties.Among TMDs, monolayer MoS2 possess direct band gap in visible region and hence can be suitable for multiple light driven semiconducting applications. The MoS2 contains Mo and S atoms which are bonded via covalent bond and the layers are bonded together via van der Waals interaction.Recently, vertically aligned MoS2 have attracted the attention of scientific community due to the presence of large exposed edges along with visible band gap for the light driven applications. We have successfully synthesized vertically oriented few layer (VFL) MoS2 over large area (1×1 cm2) on p-type Si substrate by using chemical vapor deposition (CVD) method. The synthesized VFL-MoS2 has been characterized via Raman Spectroscopy, Photoluminescence spectroscopy and Scanning electron microscopy (SEM) techniques. The photodetection and surface enhanced Raman scattering (SERS) detection property of grown VFL-MoS2/Si is demonstrated for light driven applications. The good junction formation, highly exposed edges and the defect free film provides the high photoresponsivity of 7.37 A W-1 at -2.0 V bias under 0.15 mW cm-2 intensity of 532 nm. The ultralow detection of R6G dye (10-10 M) is achieved due to the vibronic coupling existing in R6G/VFL-MoS2 system.