The 67th JSAP Spring Meeting 2020

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6 Thin Films and Surfaces » 6.4 Thin films and New materials

[13p-D221-1~14] 6.4 Thin films and New materials

Fri. Mar 13, 2020 1:45 PM - 6:30 PM D221 (11-221)

Tetsuo Tsuchiya(AIST), Hiroaki Nishikawa(Kindai Univ.), Akira Ohtomo(Tokyo Tech)

2:30 PM - 2:45 PM

▼ [13p-D221-4] The effect of post-deposition annealing on the N-doped LaB6 thin film characteristics

〇(D)KyungEun Park1, Hideki Kamata1, Shun-ichiro Ohmi1 (1.Tokyo Tech.)

Keywords:N-doped LaB6, RF sputtering, PDA process

The low work function of S / D electrodes is important to realize the n-type pentacene-based OFETs. Previously, we reported the improved N-doped LaB6 thin film characteristics by the high temperature sputtering of 150oC. In this study, the effect of post-deposition annealing (PDA) process for N-doped LaB6 thin film formation was investigated.