[13p-D221-1~14] 6.4 薄膜新材料

▼ [13p-D221-4] The effect of post-deposition annealing on the N-doped LaB₆ thin film characteristics

〇(D)KyungEun Park¹、Hideki Kamata¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：N-doped LaB6, RF sputtering, PDA process

The low work function of S / D electrodes is important to realize the n-type pentacene-based OFETs. Previously, we reported the improved N-doped LaB₆ thin film characteristics by the high temperature sputtering of 150^oC. In this study, the effect of post-deposition annealing (PDA) process for N-doped LaB₆ thin film formation was investigated.