[13p-D221-1~14] 6.4 薄膜新材料

▼ [13p-D221-5] Study of the thermal annealing effect on the BiOI based thin film prepared by SILAR

〇(M2)MATIUR MD RAHMAN¹、Anissa Adiwena Putri¹、Shinya Kato¹、Naoki Kishi¹、Tetsuo Soga¹ (1.Nagoya Inst. of Tech.)

キーワード：Thin film, BiOI based solar cell, SILAR

BiOI came as a promising material because it is safe, less toxic, and stable. Moreover, it has a very promising optical property. Therefore, it was supposed to get decent electrical properties. But unfortunately that not been happened yet. The researcher has continued the investigation to find out different parameter effects. The main purpose of this study to observe the effects of annealing temperature on the electrical properties, optical properties, morphology, and crystalline structure. Here, BiOI thin films have been prepared by using successive ionic layer absorption and reaction (SILAR) process under a different annealing temperature condition. In our study BiOI has been deposited on the top of the FTO by using SILAR process. SILAR process has continued for 30 cycles and then annealed for 1hour in the air at 100⁰C, 200⁰C, 300⁰C, and 400⁰C temperature condition. Here, with the increasing annealing temperature how the phase and crystalline size changes that has been confirmed by XRD analysis. After phase transformation existence of Bi₅0₇I and Bi₇0₉I have confirmed at 300⁰C and 400⁰C. Again, band gap increases from 1.89eV to 3.2eV as the temperature changes from 100⁰C to 400⁰C.Moreover, reduction of current density has confirmed by the measure measurement of I-V characteristics. Meanwhile, I-V characteristics shows that after 200⁰C annealing temperature, the current density of the BiOI based solar cell started to decrease and gradually going to almost zero at 400⁰C. In this study, the maximum current density 0.6mA/cm² and open circuit voltage 0.43 V have been observed at 100⁰C.