High Density Formation of Si Quantum Dots with Ge Core by Reduced-Pressure CVD and Characterization of their Photoluminescence Properties

Katsunori Makihara; Yuji Yamamoto; Shuntaro Fujimori; Takuya Maehara; Mitsuhisa Ikeda; Bernd Tillack; Seiichi Miyazaki

Presentation information

Oral presentation

9 Applied Materials Science » 9.2 Nanoparticles, Nanowires and Nanosheets

[13p-D305-1~16] 9.2 Nanoparticles, Nanowires and Nanosheets

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D305 (11-305)

Kazuki Nagashima(Kyushu Univ.), Shinya Kano(AIST), Toshifumi Iimori(Muroran Tech.)

2:45 PM - 3:00 PM

[13p-D305-5] High Density Formation of Si Quantum Dots with Ge Core by Reduced-Pressure CVD and Characterization of their Photoluminescence Properties

〇Katsunori Makihara¹, Yuji Yamamoto², Shuntaro Fujimori¹, Takuya Maehara¹, Mitsuhisa Ikeda¹, Bernd Tillack², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.IHP)

Keywords:Si Quantum Dots

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