4:30 PM - 4:45 PM
[13p-D419-10] A study of electronic properties on n type β-Ga2O3 in contact with the Au/Ti/Cr film electrode by micro-Raman imaging in high temperatures
Keywords:Ga2O3, Raman imaging, electronic properties
As an ideal material for high power devices, properties of n-type β-Ga2O3 single crystals at different temperatures, especially at high temperatures, are significant to its practical applications. However, using widegap semiconductor as MOS-FET for high-power inverter at the high temperature about 200℃ in general, the difference of values in thermal expansion coefficient between an electrode contact and the surface of widegap semiconductor would lead to peeling of an electrode and a crack on the electrode contact interface. In this study, we perform 3D-Raman imaging measurements in n-type β-Ga2O3 crystals in contact with the Au/Ti/Cr multilayer film electrode at about 200℃ and investigate electronic properties in n-type β-Ga2O3 in contact with the Au/Ti/Cr electrode film by the line shape of the 418cm-1 peak (Ag mode) by using dielectric analysis.