[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-16] Ga₂O₃ MOSFET with Maximum Oscillation Frequency of 27 GHz

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Masataka Higashiwaki¹ (1.NICT)

Keywords:Ga2O3, RF FET

Ga₂O₃ has been theoretically predicted to have a very large breakdown field and a relatively high electron saturation velocity. Therefore, the Ga₂O₃ FETs are expected to be applied not only to high-voltage switching devices but also to RF devices. In this study, in order to suppress the short channel effect that occurs in sub-μm gate scaling commonly used for RF FETs, sub-μm gate Ga₂O₃ MOSFETs were fabricated with shallow and high-concentration Si ion-implantation channel doping, and the aspect ratio of a gate length/channel layer thickness was maintained at a high value. As a result of DC and RF device characterizations of the fabricated MOSFETs, we succeeded in recording the maximum value of the maximum oscillation frequency (f_max) for Ga₂O₃ FETs.