2:15 PM - 2:30 PM
[13p-D419-2] Phase Stability of α-(AlxGa1-x)2O3 Films Grown on C-Plane Sapphire Substrates
Keywords:Ultra-wide bandgap semiconductor, Gallium oxide, Phase transition
Corundum (AlxGa1-x)2O3, which is one of ultra-wide bandgap materials (Eg>3.4eV), has attracted much interest as a material for power devices. In this study, the crystal phase stability of corundum (AlxGa1-x)2O3 films on c-plane sapphire against thermal treatment is studied.