[13p-PA10-1~21] 13.8 Optical properties and light-emitting devices

[13p-PA10-3] Indium incorporation and luminescence properties of low-temperature-grown InGaN/AlGaN quantum well

〇(M2)Kanglin Zhao¹, Soraya Shizumi¹, Kenjiro Onuma², Warakorn Yanwachirakul², Masakazu Sugiyama² (1.Tokyo Univ., 2.Tokyo Univ. RCAST)

Keywords:semiconductor, light emitting device

For low-temperature-grown InGaN / AlGaN quantum wells, which are expected to be applied to long-wavelength and broadband light emission of LEDs, the change of In incorporation and emission characteristics due to the Al content of the AlGaN layer were investigated. As a result, it is clear that when the Al content of AlGaN grown at low temperature exceeds 0.34, the surface becomes uneven due to lattice relaxation, which leads to an increase in the incorporation of In into the upper InGaN, resulting in a longer wavelength and broader emission.