[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[13p-PA4-3] Effects of Interface Charge on Cellular Automaton Device Simulation of HEMT

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kozo Makiyama², Junji Kotani² (1.AIST, 2.Fujitsu)

Keywords:semiconductor, HEMT, Simulation

Effects of interface charge of HEMT in 2DEG transport calculation of Poisson-Schroedinger and Cellular-Automaton method.