MBE Growth of GaAsSb/InAs Core/Shell Nanowires on Si(111) Substrates

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA5 (PA)

1:30 PM - 3:30 PM

〇(M2)Shunta Kakizawa¹, Koya Tanaka¹, Katsuyoshi Sakamoto¹, Koichi Yamaguchi¹ (1.Univ. Electro-Comm)

Keywords:nanowire, InAs, MBE