MBE growth of photocathode using AlGaAs-based semiconductor material

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA5 (PA)

1:30 PM - 3:30 PM

〇(M1)Iori Morita¹, Fumitaro Ishikawa¹, Tomohiro Nishitani², Masao Tabuchi³ (1.Ehime Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. SRC)

Keywords:MBE growth