[13p-PA7-1~12] 3.11 Photonic structures and phenomena

[13p-PA7-6] Improvement of fabrication yield for Raman silicon nanocavity lasers

〇(B)Masanao Fujimoto¹, Taro Kawakatsu¹, Takamasa Yasuda¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Raman silicon laser, photonic crystal, Raman scattering

We have achieved the room-temperature, continuous-wave Raman silicon laser with a threshold of ~1µW using the high-Q photonic crystal nanocavities. Our nanocavity Raman Si laser utilizes two high-Q nanocavity modes to confine the pump light and Stokes Raman scattered light. The key requirements for higher performance are that the Q factors (Qp and QS) of the two modes should be as high as possible and the frequency spacing (Δf) between these modes should be matched to the Raman shift of Si, 15.606 THz. However, these values are varied by the random fluctuations of the radius and the position of the air holes due to the fabrication accuracy, which decrease the laser performance. In order to improve the production yield of Raman Si laser, the resonator structure was modified and investigated.