[13p-PA8-1~20] 6.2 Carbon-based thin films

△ [13p-PA8-1] Local Electrical analysis of hydrogen-terminated polycrystalline diamond surface By using C-AFM and EBSD

〇Daichi Yoshii¹, Mami N. Fujii¹, Yuma Karaki¹, Sakuba Hiroto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:diamond semiconductor, EBSD, AFM

Diamond has physical properties that make it suitable for power semiconductor devices. In recent years, p-type conductivity has been confirmed by terminating the surface of diamond with hydrogen. Research on polycrystalline diamond devices that are larger and cheaper than single-crystal substrates is ongoing. The behavior of local electrical defects in hydrogen-terminated polycrystalline diamond was analyzed. In this study, we aimed to clarify the correlation with local electrical defects from the viewpoint of crystal orientation using EBSD.