[13p-PA8-1~20] 6.2 Carbon-based thin films

[13p-PA8-15] The film modification of Si-containing hydrogenated DLC films by the soft X-ray irradiation

〇Kazuhiro Kanda¹, Shotaro Tanaka¹, Masahito Niibe¹, Takayuki Hasegawa^1,2, Tsuneo Suzuki³ (1.LASTI, Univ. of Hyogo, 2.Synchrotron Analysis L.L.C., 3.Nagaoka Univ. Tech.)

Keywords:amorphous film, X-ray absorption spectroscopy, soft X-ray irradiation

To investigate irradiation effect on hydrogenated Si-containing DLC (Si-DLC) films by the soft X-ray, hydrogenated Si-DLC films were exposed to synchrotron radiation (SR) and C K edge and Si K edge NEXAFS spectra were measured. In the C K edge NEXAFS spectra, the pi* peak intensity increased by the irradiation of 15 mA×h of the soft X-rays dose, and the σ* peak became broader and shifted to higher energy. Therefore, C-C bond increased at surface of hydrogenated Si-DLC films by SR exposure. In the Si-K edge NEXAFS spectra, the peak of 1846.8 eV derived from SiO₂ increased by the surface oxidization due to the irradiation of SR. However, the significant change of spectral profile has not observed elsewhere. From these experimental results, durable surface layer against X-ray exposure was formed at the surface of hydrogenated Si-DLC films by the irradiation of soft X-ray. These change are considered to be caused by desorption of hydrogen from the surface of hydrogenated Si-DLC films.