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[13p-PA9-12] Electrical characteristics of Oxygen implanted GaN layers
Keywords:gallium nitride, MOSFET, Ion-implantation
In order to reduce JFET resistance of vertical GaN planar gate MOSFETs, n-type carrier density needs to be increased by n-type ion implantation. In this report, we investigated oxygen ion implantation as n-type dopant. Electrical properties were evaluated by forming SBD.
The sample annealed at 1100 °C showed significantly higher on-resistance than un-implanted SBD, indicating the activation of oxygen was not enough.
On the other hand, the sample annealed at 1300 °C showed higher donor density than un-implanted epitaxial layer and activation ratio of around 30%.
The sample annealed at 1100 °C showed significantly higher on-resistance than un-implanted SBD, indicating the activation of oxygen was not enough.
On the other hand, the sample annealed at 1300 °C showed higher donor density than un-implanted epitaxial layer and activation ratio of around 30%.