[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-14] Implantation of Mg ion into GaN substrate on a channeling condition (II)

〇Tomoaki Nishimura¹, Kiyoji Ikeda¹, Tetsu Kachi² (1.Hosei Univ., 2.Nagoya Univ.)

Keywords:GaN, ion implantation, channeling

Samples implanted with 50 to 180 keV Mg at a dose of 1×10¹⁴ cm^-2 and 180 keV Mg implanted at a dose of 1×10¹⁵ cm^-2 were fabricated on a high-purity GaN substrate grown by HVPE under <0001> channeling incidence conditions. Mg depth distribution was analyzed by SIMS. As a result, it was found that Mg was ion-implanted to a depth of several μm even at a low energy of 50 keV. In addition, the trajectories of the incident Mg ions were analyzed by Monte Carlo simulation to reproduce the distribution.