[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-23] Performance Improvement of Superjunction IGBT by Three-Dimensional Scaling

〇Hajime Kayashima¹, Munetoshi Hukui¹, Kiyoshi Takeuchi¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

Keywords:IGBT, Superjunction, scaling

IGBT in which superjunction structure is introduced into the drift layer is called superjunction IGBT, and its turn-off loss is significantly lower than a conventional IGBT. In this research, it is shown that the performance is further improved by applying the scaling rule as used in CMOS, to the emitter structure of the superjunction IGBT.