[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-8] Influence of equipment on GaN etching using Cl2 gas

〇(B)Moe Okamoto¹, Yushi Hamaya¹, Yuuki Moriyama¹, Satoko Shinkai¹ (1.Kyuukou Univ)

Keywords:Gallium nitride