[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-15] Effect of polarity of GaN substrates on surface plasmon enhanced light emissions from InGaN/GaN quantum wells

〇Kento Ikeda¹, Jun Kametani¹, Toshiki Nakamura¹, Fumiya Murao¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:Surface plasmon, InGaN/GaN, Semipolar

The luminescence mechanism of InGaN / GaN quantum wells is greatly affected by the quantum confined Stark effect (QCSE), and the luminous efficiency is significantly reduced at blue to green wavelengths. However, this effect can be reduced by using a semipolar GaN substrate. In this study, we investigated the effect of the polarity of the GaN substrate on the emission enhancement using surface plasmon (SP) resonance that we have reported so far, and examined micro photoluminescence (PL) of the blue emission from Ag-coated polar / semipolar InGaN / GaN.