4:00 PM - 6:00 PM
[13p-PB1-21] Development of a gate-controlled AlGaN based UV sensor with the extremely high sensitivity
Keywords:UVC photodetector, Two-dimensional electron gas, transistor
Recently, a high-sensitivity UV sensor which does not react to sunlight or a fluorescent lamp (solar blind) for a flame sensor or a measurement application has been desired. In this study, a sensor using two-dimensional electron gas (2DEG) induced at the interface of Al0.6Ga0.4N/Al0.5Ga0.5N was developed. The 2DEG carrier concentration was controlled by the gate voltage applied to the Ni/Au Schottky gate electrode, achieving ultra-high sensitivity and high rejection ratio. The photo sensitivity was 106 A/W and the rejection ratio was 106, which is the world's highest characteristic for solid-state devices. These results show the possibility of realizing a photomultiplier-level sensor using a solid-state device.