[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-21] Development of a gate-controlled AlGaN based UV sensor with the extremely high sensitivity

〇Akira Yoshikawa¹, Motohisa Horaguchi², Kazuhiro Nagase¹, Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki^2,3 (1.Asahi-Kasei, 2.Fac. Sci & Tec., Meijo Univ., 3.Akasaki Research Center, Nagoya Univ.)

Keywords:UVC photodetector, Two-dimensional electron gas, transistor

Recently, a high-sensitivity UV sensor which does not react to sunlight or a fluorescent lamp (solar blind) for a flame sensor or a measurement application has been desired. In this study, a sensor using two-dimensional electron gas (2DEG) induced at the interface of Al_0.6Ga_0.4N/Al_0.5Ga_0.5N was developed. The 2DEG carrier concentration was controlled by the gate voltage applied to the Ni/Au Schottky gate electrode, achieving ultra-high sensitivity and high rejection ratio. The photo sensitivity was 10⁶ A/W and the rejection ratio was 10⁶, which is the world's highest characteristic for solid-state devices. These results show the possibility of realizing a photomultiplier-level sensor using a solid-state device.