[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-23] Quality and band offset of AlGaN films on diamond substrate grown by MBE

〇Shozo Kono¹, Kiyotaka Horikawa², Tetsuya Tatsuishi², Taichi Yabe², Taisuke Kageura³, Hiroshi Kawarada^2,1 (1.RONL, Waseda Univ., 2.Fac. Sci. Eng., Waseda Univ., 3.NIMS)

Keywords:diamond substrate, AlGaN thin film, band offset

The growth of n-type AlGaN thin films on p-type diamond is attracting because of its potential application to power and high-frequency electronic devices. It has not been reported that n-type AlGaN films were grown by MBE on diamond substrate. We have succeeded to grow electric conductive AlGaN films on diamond (111) substrate. The quality and band offset of the AlGaN films will be reported.