[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-29] Electronic states of Ga in SiO₂ by first principles calculations

〇Yuki Ohuchi¹, Miki Ogasawara¹, Takayuki Hirose¹, Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

Keywords:SiO2, first principles calculations, leak

SiO₂ is one of the promising candidates as a gate dielectric for GaN MOS devices. However, its reliability needs to be carefully established due to the Ga diffusion during thermal annealing. In this presentation, we report the electronic states of Ga in SiO₂ by first principles calculations in order to investigate whether Ga can be a potential leak path in SiO₂.