[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-6] Remote Homo-Epitaxy of InN using Graphene Buffer Layer

〇Kenta Matsushima¹, Shingo Arakawa¹, Ukyo Ooe¹, Shinichiro Mouri¹, Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

Keywords:semiconductor, 2D material

A crystal growth technique called remote homo-epitaxy, in which pseudo homoepitaxial growth is performed by using a 2D material as a buffer layer, has been proposed. As a result, semiconductor thin film growth that is not restricted by lattice matching is expected. We have grown InN on graphene by remote homo-epitaxy and evaluated it. It was found that InN microcrystals of about 100 nm were grown. In addition, the surface morphology of InN was different. Therefore, it is considered that the effect depends on the number of graphene layers.