The 67th JSAP Spring Meeting 2020

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-PB1-1~29] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PB1 (PB)

4:00 PM - 6:00 PM

[13p-PB1-7] Microstructural characterization of RF-MBE grown InN on high-quality AlN template (II)

Hidenori Tachibana1, Yusuke Takabayashi1, Ryosuke Nakamura1, Shinichiro Mori1, Yasushi Nanishi1, Tsutomu Araki1, Kanako Shojiki2, Hideto Miyake2,3 (1.Ritsumeikan Univ., 2.Grad. School of Eng, Mie Univ., 3.Grad School of RIS, Mie Univ.)


InN is an attractive material for long wavelength optical devices and high frequency electronic devices. However, Since there is no lattice-matched substrate for InN, density of threading dislocation in InN films grown hetero epitaxially on foreign substrates (e.g. GaN template and sapphire) is very high. Our group aimed to reduce the threading dislocation density in InN film using a high quality AlN template. In this presentation, we will be discussed the dislocations in the InN layer and the microstructure of the InN / AlN interface.