[14a-A201-1~8] Nano-cybernetics of interface bonded at room or low temperature and ultra thin films at heterojunction interface

[14a-A201-2] Interface Science and Engineering for Room Temperature Bonding

〇Tadatomo Suga¹ (1.Meisei University)

Keywords:bonding, surface activated bonding, heterogeneous integration

The surface activated bonding (SAB) has been developed as a potential method for heterogeneous bonding at room temperature, attracting increasing interest due to its simple process flow, no need for additional intermediate materials for bonding, and compatibility with CMOS technology. The standard SAB method is based on the surface activation process using Ar fast atom beam irradiation onto the surfaces, which enables them bonded at room temperature only by contact. The standard SAB, however, failed to bond some dielectric materials, such as glass and silicon oxide. A modified SAB was developed to solve this problem, by using an intermediate layer of Si, metals, or even metal oxide deposited on the activated surfaces. This modified SAB is now applied to bond not only SiO2 glasses but also polymer films such as PEN and Polyimide, as well as WBG semiconductor wafers to diamond substrate with a wide perspective of the applicability on heterogeneous integration for various microsystems.