The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[14a-A202-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2020 9:00 AM - 11:00 AM A202 (6-202)

Kosuke Hara(Univ. of Yamanashi)

10:00 AM - 10:15 AM

[14a-A202-5] Relationship between electronic states and thermoelectric characteristics in B20-type CoSi film /Si

Takafumi Ishibe1, Takahiro Hinakawa1, Shunya Sakane1, Kazunori Sato1, Eiichi Kobayashi2, Takeshi Fujita3, Yoshiaki Nakamura1 (1.Osaka Univ., 2.Kyushu synchrotron light research center, 3.Kochi Univ. Technol.)

Keywords:Thermoelectric material, Silicide, Electronic states

Dirac, Weyl materials are attracting great interest as one of the promising thermoelectric materials because they show high thermoelectric power factor due to the peculiar electronic states. We have paid attention to e-CoSi, Si-based material with Dirac-like electron system. So far, we have successfully formed single-phase e-CoSi films on Si substrates, but the relationship between electronic states and thermoelectric characteristics has not been revealed. In this study, we analyze the electrocnic states of e-CoSi films/Si and reveal the effect on thermoelectric characteristics.