[14a-A302-1~13] 15.4 III-V族窒化物結晶

▲ [14a-A302-3] Controlling the top-down fabrication of InGaN/GaN nanowire arrays for ultraviolet and visible photonics

〇Sergent Sylvain^1,2、Damilano Benjamin³、Vezian Stephane³、Chenot Sebastien³、Takiguchi Masato^1,2、Tsuchizawa Tai^1,4、Taniyama Hideaki^1,2、Notomi Masaya^1,2 (1.NTT Nanophotonics Center、2.NTT Basic Research Laboratories、3.CRHEA-CNRS、4.NTT Device Technology Laboratory)

キーワード：GaN nanowire, Top-down fabrication, Nanolaser

Group-III nitride nanowires (NWs) have emerged as candidates of choice for a large range of optoelectronics and photonics applications such as visible light-emitting diodes, photonic, plasmonic and polaritonic lasers or even efficient single photon sources operating at high temperatures. Despite such remarkable achievements, the fabrication of high-quality group-III nitride NWs with a fine control of their position, geometry and structural properties remains a challenge in the frame of classical bottom-up epitaxial techniques. Breaking with this approach, we here report on the fabrication of arrays of GaN nanowires embedding InGaN quantum disks and quantum dots by a top-down selective-area sublimation method, using a combination of two-dimensional molecular beam epitaxy of planar InGaN/GaN heterostructures, electron-beam lithography and a recently developed ultra-high-vacuum sublimation technique. We show that such a fine control allows us to realize on the same wafer not only arrays of NWs supporting single-mode Fabry-Pérot lasing at room-temperature, but also subwavelength NWs that we integrate in photonic crystals for the realization of NW-induced nanocavities.