[14a-A302-1~13] 15.4 III-V-group nitride crystals

△ [14a-A302-9] Growth of thick Al _0.6 Ga _0.4 N film on sputtered AlN with high temperature annealing formed on a-plane sapphire

〇(B)Moe Shimokawa¹, Sho Iwayama^1,2, Shohei Teramura¹, Yusuke Sakuragi¹, Shinji Yasue¹, Sayaka Ishizuka¹, Tomoya Omori¹, Kazuki Yamada¹, Syunya Tanaka¹, Kosuke Sato^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki⁴, Hideto Miyake² (1.Meijo Univ., 2.,Grad. Sch. of Reg. Innov. Stu., Mie Univ., 3.Asahi Kasei Co., 4.Akasaki Rec. C.,Nagoya Univ.)

Keywords:semiconductor, AlGaN, UV-B