[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

[14a-A303-1] Luminescence Enhancement of Implanted Pr in GaN Nanopillars at Room Temperature

〇Shinichiro Sato^1,2, Manato Deki³, Shuo Li², Hirotaka Watanabe³, Shugo Nitta³, Yosio Honda³, Tomoaki Nishimura⁴, Brant Gibson², Andrew Greentree², Hiroshi Amano³, Takeshi Ohshima¹ (1.QST, 2.CNBP, RMIT Univ., 3.IMaSS, Nagoya Univ., 4.Hosei Univ.)

Keywords:Gallium Nitride, Nanostructure, Photoluminescence

Showing strong luminescence with a narrow linewidth at room temperature, lanthanoid doped gallium nitride (GaN) has the potential to be used for single photon source. This study reports photoluminescence properties of praseodymium (Pr) doped GaN with nanopillar structures at room temperature. Pr³⁺ ions in GaN emit at 652 nm due to ³P₀-³F₂ transition and it can be enhanced by nanopillar structures. At the presentation, the excitation power dependence and the luminescence lifetime will be reported and the luminescence enhancement mechanism will be discussed.