[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

△ [14a-A303-4] Enhanced near-infrared emission in Tm,Mg-codoped GaN

〇Ryota Komai¹, Naoki Yoshioka¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:semiconductor, photoluminescence, rare-earth

We have been working on the realization of an ultra-narrow-band, ultra-stable wavelength, near-infrared light-emitting diode (NIR-LED) with an active layer of in-situ doped Tm in GaN by metalorganic vapor phase epitaxy (OMVPE). For applications, it is necessary to further increase the emission intensity. In this study, we report on the formation of a new Tm emission center and the enhancement of emission intensity by intentionally co-doping Mg impurities in addition to Tm during crystal growth.