The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

Sat. Mar 14, 2020 9:30 AM - 11:15 AM A303 (6-303)

Ariyuki Kato(Nagaoka Univ. of Tech.)

10:15 AM - 10:30 AM

[14a-A303-4] Enhanced near-infrared emission in Tm,Mg-codoped GaN

Ryota Komai1, Naoki Yoshioka1, Shuhei Ichikawa1, Jun Tatebayashi1, Yasufumi Fujiwara1 (1.Osaka Univ.)

Keywords:semiconductor, photoluminescence, rare-earth

We have been working on the realization of an ultra-narrow-band, ultra-stable wavelength, near-infrared light-emitting diode (NIR-LED) with an active layer of in-situ doped Tm in GaN by metalorganic vapor phase epitaxy (OMVPE). For applications, it is necessary to further increase the emission intensity. In this study, we report on the formation of a new Tm emission center and the enhancement of emission intensity by intentionally co-doping Mg impurities in addition to Tm during crystal growth.