[14a-A305-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14a-A305-2] Gaseous species transport in Si minimal CVD reactor observed by QCM

Mana Otani¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:MINIMAL FAB, epitaxial growth, Silicon

Dichlorosilane gas transport in Si minimal CVD reactor was observed using two QCMs, which were installed before the inlet and after the outlet of the reactor. The frequency changes by the two QCMs and the frequency difference between the two QCMs gave various information. By the two QCMs, the characteristic behavior of dichlorosilane gas transport in the reactor was studied.