[14a-A401-1~5] New functional memory devices with oxide materials and their physics

[14a-A401-5] Theoretical Studies on the Physical Properties of MONOS Charge Trap Memories

〇Kenji Shiraishi¹ (1.Nagoya Univ.)

Keywords:Nand-flash memory, MONOS, First pricniples calculations

In MONOS charge trap memories, it is not guaranteed that defects in SiN layrers reveal reversible structural changes. We clarified that N vacancies in SiN layers reveal reversible structural change and indeal defects for charge trap memories. Moreover, we discuss whether reversible structural changes are guaranteed or not, in other nonvolatile memories.