[14a-A404-3~11] 17.3 Layered materials

[14a-A404-3] Optical Properties of Monolayer Transition Metal Dichalcogenides Depending on Polarity of Supported on Gallium Nitride

〇Shinichiro Mouri¹, Yuma Komichi¹, Keisuke Shinokita², Kazunari Matsuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Kyoto Univ.)

Keywords:Layered Materials, MoS2, Nitride Semiconductors

We have studied the photoluminescence (PL) properties of 1L-MoS₂ exfoliated onto free-standing GaN substrates, especially focusing on the polarity of GaN surface. On N polar (-c) surface, trion PL became dominant due to the interaction between excitons and surface accumulated electroncs resulting from supontaneous polarization induced upper forward band bending.