The 67th JSAP Spring Meeting 2020

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[14a-A407-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sat. Mar 14, 2020 9:15 AM - 11:30 AM A407 (6-407)

Tamihiro Gotoh(Gunma Univ.), Toshihiro Nakaoka(Sophia Univ.)

11:15 AM - 11:30 AM

[14a-A407-8] [Young Scientist Presentation Award Speech] Optical and electrical switching induced by displacive transformation in MnTe films

〇Shunsuke Mori1, Daisuke Ando1, Yuji Sutou1 (1.Tohoku Univ.)

Keywords:MnTe, phase change, memory

MnTe thin films show the drastic change in electrical and optical properties induced by the polymorph change between α and β phase. Recently, it has been found that very low enrgy and fast memory operation can be realized using the melting-free polymorphic change in the MnTe layer. In this study, we attempted to investigate the polymorphic change mechanism of MnTe thin films in memory devices.