[14a-A409-1~7] 12.4 Organic light-emitting devices and organic transistors

[14a-A409-4] Fabrication and Operation Analysis of Phase Transition Transistor by Using Lamination Contact Electrode

〇(B)Riku Takeda¹, Teruki Sano¹, Masatoshi Sakai¹, Yugo Okada², Hyuma Masu³, Kazuhiro Kudo¹ (1.Chiba Univ., 2.CFS, Chiba Univ., 3.CAI, Chiba Univ)

Keywords:Strongly Correlated Material, Charge Order, transistor

In this research, we fabricated alpha-(BEDT-TTF)₂I₃ single crystal field effect transistor (FET) by using lamination contact electrode and measured FET characteristic near the metal-insulator phase transition temperature. The feature of metal-insulator phase transition FET was observed in temperature dependence of 4-terminal FET characteristics. We calculated combined resistance of channel where metal and insulator sites coexisted, based on percolation model. By changing the distribution ratio of metal sites and insulator sites, the behavior of phase-change FET was reproduced.