[14a-A410-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[14a-A410-7] Comparison of decay curves obtained by u-PCD and TR-PL for SiC epilayers

〇Masashi Kato¹, Shinya Katahira¹ (1.NITech)

Keywords:SiC, carrier lifetime, measurement method

Microwave photoconductive decay and time-resolved photoluminescence methods are commonly used as carrier lifetime evaluation for SiC. Since these methods use different probes, the signals are different even if the same sample is measured. Therefore, in order to accurately evaluate the carrier lifetime, it is necessary to understand characteristics of each method. In particular, under high injection conditions in which the excited carrier density is larger than the doping density of the sample, a large difference appears in the decay curves obtained by the two methods. In this study, we discuss the carrier recombination process inside the SiC epilayer by analysing the difference between the two methods.