2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[14a-A501-1~13] 10.2 スピン基盤技術・萌芽的デバイス技術

2020年3月14日(土) 09:00 〜 12:30 A501 (6-501)

好田 誠(東北大)、谷口 知大(産総研)

12:15 〜 12:30

[14a-A501-13] Spin Hall effect of non-equilibrium Cu-Ir binary alloy

Hiroto Masuda1、Rajkumar Modak2、〇Takeshi Seki1,2,3、Ken-ichi Uchida1,2,3、Yong Chang Lau1,3、Yuya Sakuraba2,4、Ryo Iguchi2、Koki Takanashi1,3,5 (1.IMR, Tohoku Univ.、2.NIMS、3.CSRN, Tohoku Univ.、4.JST PRESTO、5.CSIS, Tohoku Univ.)

キーワード:spin Hall effect, Cu, combinatorial technique

We carried out a comprehensive study on the SHE of Cu-Ir binary alloys by exploiting a combinatorial technique based on the thermal imaging for a composition-spread film. We utilized the spin Peltier effect (SPE) as a probe of the spin-charge current conversion. From the thermal images originating from the SPE, we have found that the spin Hall efficiency is maximized at the composition of Cu78Ir22, which corresponds to the non-equilibrium Cu-Ir and is not thermodynamically stable in the bulk phase diagram. We also quantitatively analyzed the spin Hall efficiency for the Cu78Ir22/ Co bilayer. That quantative evaluation suggests that the non-equilibrium Cu-Ir alloy is a candidate of spin Hall material.