[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

[14a-B401-11] Investigation of activation anneal for selective p-GaN layer.

〇Kenta Watanabe¹, Hiroko Iguchi², Maito Shiraishi³, Taisei Miyazaki³, Ryusui Wada³, Masato Omori³, Takashi Okawa¹, Yoshitaka Nagasato¹ (1.Toyota Motor Corp., 2.Toyota Inst., 3.Oita Univ.)

Keywords:semiconductor, GaN, Ion implantation