[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

[14a-B401-8] Observation of current decrease in tiny p-n junction diode on a threading dislocation

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:GaN, p-n diode, Threading dislocation density

Previously, we reported that the on-resistance increased and the current decreased due to an increase in threading dislocation density (TDD). In this study, in order to evaluate in detail how one dislocation contributes to current reduction, diodes with a micro diameter (6 um in diameter) were fabricated with dislocations and without dislocation, and the I-V characteristics of both were compared. As a result, a decrease in the current and an increase in the on-resistance of the diode with the dislocation were confirmed, and the difference between the current average values of both was about 0.37 mA.