11:15 AM - 11:30 AM
▲ [14a-B415-7] A high-Q 4H-SiC photonic crystal nanocavity operating at 960nm
Keywords:Silicon carbide, Photonic crystal nanocavities, Vacancy center
In this work, we report a high-Q crystalline-SiC based two-dimensional photonic crystal nanocavity operating at 960 nm. We fabricated a nanocavity using a 4H-SiC slab and measured the resonant spectrum of the cavity. The observed resonant wavelength was ~960nm, which is near the emission wavelength of a Si vacancy color center in 4H-SiC. Also, a high Q factor of 4×104 was observed. We expect that our nanocavity offers advantages for strong coupling with vacancy centers in SiC and its quantum applications.