[14a-B415-1~9] 3.11 フォトニック構造・現象

▲ [14a-B415-7] A high-Q 4H-SiC photonic crystal nanocavity operating at 960nm

〇(D)Heungjoon Kim^1,2、Takashi Asano¹、Bong-Shik Song^1,2、Susumu Noda¹ (1.Kyoto Univ.、2.Sungkyunkwan Univ.)

キーワード：Silicon carbide, Photonic crystal nanocavities, Vacancy center

In this work, we report a high-Q crystalline-SiC based two-dimensional photonic crystal nanocavity operating at 960 nm. We fabricated a nanocavity using a 4H-SiC slab and measured the resonant spectrum of the cavity. The observed resonant wavelength was ~960nm, which is near the emission wavelength of a Si vacancy color center in 4H-SiC. Also, a high Q factor of 4×10⁴ was observed. We expect that our nanocavity offers advantages for strong coupling with vacancy centers in SiC and its quantum applications.