[14a-D311-6~11] 8.6 Plasma Electronics English Session

▲ [14a-D311-6] Investigation of fluorine-based plasma for Atomic Layer Etching of GaN

〇Cedric Mannequin¹、Kisho Nakazawa¹、Christophe Vallee^1,2、Etienne Gheeraert^1,3、Henri Mariette^1,3、Katsuhiro Akimoto¹、Masahiro Sasaki¹、Christian Dussarat⁴ (1.Department of Applied Physics, Tsukuba Univ.、2.CNRS, LTM, Grenoble-Alpes Univ.、3.CNRS, Grenoble-INP, Institut Neel, Grenoble-Alpes Univ.、4.Air Liquide Laboratories)

キーワード：GaN, Atomic Layer Etching, Plasma Etching

Atomic Layer Etching (ALE) by limiting defect creation opens a new path for integration of efficient GaN based optoelectronic and power (High Electron Mobility Transistor) devices. In this work, we investigate the use of CF₄/O₂/Ar plasma for the ALE of GaN. We report Etching rate Per Cycle (EPC) dependence to the O₂ flow rate and the formation of C_xF_y oligomers at the GaN surface.