[14a-D311-6~11] 8.6 Plasma Electronics English Session

▼ [14a-D311-7] Study of beta-Ga₂O₃ dry-etching

〇(M2)Andrea Fassion^1,2, Yohan Douest^1,2, Cedric Mannequin¹, Christophe Vallee^1,3, Etienne Gheeraert^1,4, Henri Mariette^1,4, Katsuhiro Akimoto¹, Masahiro Sasaki¹, Toshinitsu Ito⁵, Christian Dussarat⁶ (1.Department of Applied Physics, Tsukuba Univ., 2.Polytech Grenoble, Grenoble-Alpes Univ., 3.CNRS, LTM, Grenoble-Alpes Univ., 4.CNRS, Grenoble-INP, Institut Neel, Grenoble-Alpes Univ., 5.National Institute of Advanced Industrial Science and Technology (AIST)., 6.Air Liquide Laboratories)

Keywords:Beta-Ga2O3, ICP-RIE, BCl3

We propose an in-depth etching study relying on BCl₃/Cl₂/Kr plasma for (-201) beta-Ga₂O₃. High etch rate (about 96 nm.min^-1) and smooth surfaces are obtained for BCl₃/Kr plasma followed by a O₂ plasma exposure. Finally, we provide a detailed etching mechanism hinging on the formation of a Si_xB_yCl_zO_w deposit, where Si originates from the carrier wafer.