[14a-D311-6~11] 8.6 Plasma Electronics English Session

▼ [14a-D311-7] Study of beta-Ga₂O₃ dry-etching

〇(M2)Andrea Fassion^1,2、Yohan Douest^1,2、Cedric Mannequin¹、Christophe Vallee^1,3、Etienne Gheeraert^1,4、Henri Mariette^1,4、Katsuhiro Akimoto¹、Masahiro Sasaki¹、Toshinitsu Ito⁵、Christian Dussarat⁶ (1.Department of Applied Physics, Tsukuba Univ.、2.Polytech Grenoble, Grenoble-Alpes Univ.、3.CNRS, LTM, Grenoble-Alpes Univ.、4.CNRS, Grenoble-INP, Institut Neel, Grenoble-Alpes Univ.、5.National Institute of Advanced Industrial Science and Technology (AIST).、6.Air Liquide Laboratories)

キーワード：Beta-Ga2O3, ICP-RIE, BCl3

We propose an in-depth etching study relying on BCl₃/Cl₂/Kr plasma for (-201) beta-Ga₂O₃. High etch rate (about 96 nm.min^-1) and smooth surfaces are obtained for BCl₃/Kr plasma followed by a O₂ plasma exposure. Finally, we provide a detailed etching mechanism hinging on the formation of a Si_xB_yCl_zO_w deposit, where Si originates from the carrier wafer.