[14a-PA2-1~18] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [14a-PA2-12] On-site CVD Formation of Multi-layered Graphene on Silicon Nanowires

〇(DC)Steaphan Mark Wallace^1,2、Wipakorn Jevasuwan²、Naoki Fukata^1,2 (1.Univ. of Tsukuba、2.Nat. Inst. for Materials Science)

キーワード：Silicon, Nanowires, Graphene

Our research outlines a process to form multi-layer graphene with complex shapes on-site by using Ni as the catalyst on SiO₂ thin films on silicon nanowires (SiNWs). Graphene is grown in a CVD process from the carbon precursor CH₄, and the Ni catalyst is later removed by wet etching. The graphene films remain on the surface after etching due to the nanowire substrate architecture and retain the shape of the original catalyst. The graphene forms a continuous film covering the SiNWs over a 1cm² sample area and have a multi-layered graphene Raman spectrum signature. The graphene on SiNW structure may be useful for future device applications as it has an increased graphene surface area compared to a similar planar substrate and is combined with the light-trapping optical properties of the SiNWs.